2001

  1. P. Moeck, T. Topuria, N. D. Browning, R. J. Nicholas, R. G. Booker, Atomic Self-Ordering in Heteroepitaxially Grown Semiconductor Quantum Dots Due to Relaxation of External Lattice Mismatch Strains, Proceedings 2001 Materials Research Society Fall Meeting Volume 696 N8.8, November 26 - 30, 2001, Boston, Massachussetts.
  2. P. Moeck, T. Topuria, Y. Y. Lei, N. D. Browning, Classification of Structural Order in Self-Assembled Semiconductor Quantum Dots, Proceedings Frontiers of Nanostructured Systems, Omni Hotel, October 14 – 16, 2001, Charlottesville, Virginia, poster.
  3. P. Moeck, T. Topuria, N. D. Browning, M. Dobrowolska, S. Lee, J. K. Furdyna, G. R. Booker, N. J. Mason, R. J. Nicholas, Self-Ordered Structures and Compositional Modulations on the Atomic scale in (Cd,Zn,Mn)Se and In(Sb,As) Quantum Dot Structures, Proceedings 2001 Electronic Materials Conference (43rd conference), University of Notre Dame, June 27 – 29, 2001, Notre Dame, Indiana.
  4. N. D. Browning, I. Arslan, E.M. James, P. Moeck, T. Topuria, Y. Xinn, Analyzing Interfaces and Defects in Semiconducting Materials on the Atomic Scale, Proceedings of the Royal Microscopical Society Conference, University of Oxford, March 25 - 29, 2001, Oxford, U.K..
  5. P. Moeck, T. Topuria, N. D. Browning, G. R. Booker, N. J. Mason, R. J. Nicholas, L. V. Titova, M. Dobrowolska, S. Lee, J. K. Furdyna, Self-Ordering on a Multiple Length Scale in Certain Heteroepitaxial II-VI and III-V Compound Semiconductors Structures, Proceedings of the 6th International Symposium on Advanced Physical Fields Growth of Well-defined Nanostructures, March 6 - 9, 2001, National Institute of Metals, Tsukuba, Japan, p. 251 – 255, poster.

2000

  1. P. Moeck, T. Topuria, N. D. Browning, G. R. Booker, N. J. Mason, R. J. Nicholas, L. V. Titova, M. Dobrowolska, S. Lee, J. K. Furdyna, Self-Ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs Quantum Dot Structures and a Novel Type of Quantum Dot, Proceedings 2000 Materials Research Society Fall Meeting Vol 642 J6.3, November 27 – December 1, 2000, Boston, Massachusetts.
  2. T. Topuria, P. Moeck, N. D. Browning, M. Dobrowolska, L. Titova, S. Lee, J. K. Furdyna, Z-Contrast Scanning Transmission Electron Microscopy on Self-Assembled CdSe Quantum Dots in ZnSe and (Zn,Mn)Se Matrices, Proceedings 2000 Materials Research Society Fall Meeting Volume 642 J8.3, November 27 – December 1, 2000, Boston, Massachusetts.
  3. T. Topuria, P. Moeck, N. D. Browning, L. Titova, M. Dobrowolska, S. Lee and J. K. Furdyna, Self-Ordered CdSe Quantum Dots in ZnSe and (Zn,Mn)Se Matrices Assessed by Transmission Electron Microscopy and Photoluminescence Spectroscopy, Proceedings 2000 U.S. Workshop on the Physics and Chemistry of II-VI Materials, October 30 – November 1, 2000, Albuquerque, New Mexico.
  4. P. Moeck, Thermal Treatment Induced Dislocation Bundles in GaAs Substrates Studied by Scanning Infrared Polariscopy, Visible-Light Interferometry, Transmission Electron Microscopy, Makyoh and X-ray Topography, Proceedings Microscopy and Microanalysis 2000, edited by G. W. Bailey S. McKernan, R. L. Price, S. D. Walck, P.-M. Charest, R. Gauvin, pp. 1104 - 1105, August 13 – 17, 2000, Philadelphia, Pennsylvania, poster.
  5. P. Moeck, G. R. Booker, E. Alphandéry, N. J. Mason, R. J. Nicholas, Self-Organised Sb-Based Quantum Dot Structures Studied by Means of AFM, TEM and PL, Proceedings Microscopy and Microanalysis 2000, edited by G. W. Bailey S. McKernan, R. L. Price, S. D. Walck, P.-M. Charest, R. Gauvin, pp. 1102 – 1103, August 13 - 17, 2000, Philadelphia, Pennsylvania, poster.
  6. P. Moeck, G. R. Booker, E. Alphandéry, N. J. Mason, R. J. Nicholas, T. Topuria, N. D. Browning, MOVPE Grown Self-Assembled and Self-Ordered (In,Ga)Sb Quantum Dots in GaSb Matrix Assessed by Means of AFM, TEM and PL, Proceedings of the 5th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 21 – 24, 2000, Heraclion, Greece.

1999

  1. P. Moeck, G. R. Booker, Comparison between Experiment and Theory for MBE Sample-Holder Induced Plastic Deformation, Proceedings of the 3rd International Conference on Mid-Infrared Optoelectronic Materials and Devices, September 5 - 7, 1999, Aachen Germany, poster.
  2. P. Moeck, G. R. Booker, E. Alphandéry, R. J. Nicholas, N. J. Mason, MOVPE Grown Self-Assembled Sb-Based Quantum Dots Assessed by Means of AFM, TEM and PL, Proceedings of the 3rd International Mid-Infrared Optoelectronics - Materials and Devices Conference, September 5 - 7, 1999, Aachen Germany, p. O14.
  3. P. Moeck, G. R. Booker, E. Alphandéry, R. J. Nicholas, N. J. Mason, Self-Assembled InSb Quantum Dots in InAs and GaSb Matrices Assessed by Means of TEM, AFM and PL, Proceedings of the XI International Conference on Microscopy of Semiconducting Materials, March 22 - 25, 1999, Oxford, poster.
  4. P. Moeck, M. Fukuzawa, Z. Laczik, M. Yamada, G. W. Smith, G. R. Booker, B. K. Tanner, M. Herms, Dislocation Bundles in GaAs Substrates: an X-ray Topography & Diffraction, Scanning Infrared Polariscopy, Electron Microscopy, Nomarski Microscopy, and Makyoh Topography Assessment, Proceedings of the XI International Conference on Microscopy of Semiconducting Materials, March 22 - 25, 1999, Oxford, U.K..
  5. H. R. Hardaway, J. Heber, P. Moeck, M. J. Pullin, T. Stradling, P. J. Tang, C. C. Phillips, Optical Studies of InAs/In(As,Sb) Single Quantum Well (SQW) and Strained-Layer Superlattice (SLS) LEDs for the Mid-Infrared (MIR) Region, Proceedings of SPIE Volume 3621 124, DOI:10.1117/12.344470, San Jose, CA, January 27 - 28, 1999, San Jose, California.

1998

  1. E. Alphandéry, R. J. Nicholas, N. J. Mason, P. Moeck, G. R. Booker, Photoluminescence and Magnetoluminescence of Self-Assembled InSb Quantum Dots on GaSb, Proceedings of the 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, August 2 - 7, 1998, Jerusalem, Israel.
  2. K. Mizuno, P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, A. M. Keir, Strain Relaxation in an (In,Ga)As Epilayer by Means of Twin Formation, Proceedings of the 12th International Conference on Crystal Growth in Conjunction with the 10th International Conference on Vapour Growth and Epitaxy, July 26 - 31, 1998, Jerusalem, Israel, p. 335, poster.
  3. P. Moeck, K. Mizuno, B. K. Tanner, G. W. Smith, Assessment of Oval Defects by Means of Double-Crystal Synchrotron X-ray Reflection Topography, Proceedings of the 12th International Conference on Crystal Growth in Conjunction with the 10th International Conference on Vapour Growth and Epitaxy, July 26 - 31, 1998, Jerusalem, Israel, p. 101, poster.
  4. P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, Critical Thickness Observation Window of Quantum-Well Structures as Observed by Synchrotron X-ray Topography, Proceedings of the 12th International Conference on Crystal Growth in Conjunction with the 10th International Conference on Vapour Growth and Epitaxy, July 26 - 31, 1998, Jerusalem, Israel, p. 174, poster.
  5. P. Moeck, B. K. Tanner, G. W. Smith, Dislocations in GaAs Substrates Originating at Sample Holders During Molecular Beam Epitaxy, Proceedings of the 12th International Conference on Crystal Growth in Conjunction with the 10th International Conference on Vapour Growth and Epitaxy, July 26 - 31, 1998, Jerusalem, Israel, p. 323, poster.
  6. B. K. Tanner, A. M. Keir, P. Moeck, C. R. Whitehouse, G. Lacey, A. D. Johnson, G. W. Smith, G. F. Clark, X-ray Optics of In-Situ Synchrotron Topography Studies of the Early Stages of Relaxation in Epitaxial InGaAs on GaAs, Proceedings of SPIE Volume 3448 100, DOI:10.1117/12.332496, July 21 – 22, 1998, San Diego, California.
  7. M. J. Pullin, H. R. Hardaway, J. Heber, P. Moeck, C. C. Phillips, W. T. Yuen, 300K Operation and Negative Luminescence from In(As,Sb) SLS LEDs with AlSb Barriers for Improved Carrier Confinement, Proceedings of the 2nd International Conference on Mid-Infrared Optoelectronics Materials and Devices, March 26 – 27, 1998, Prague, Czech Republic.
  8. P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, Critical Thickness of Single Strained (Ga,In)As Layers as Observed by In-Situ Synchrotron X-ray Topography, Proceedings of the 6th Annual Conference of the German Crystallographic Society, March 2 - 5, 1998, Karlsruhe, Germany.
  9. P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, Critical Thickness Observation Window of Quantum-Well Structures as Observed by Synchrotron X-ray Topography, Proceedings of the 6th Annual Conference of the German Crystallographic Society, March 2 - 5, 1998, Karlsruhe, Germany.
  10. P. Moeck, B. K. Tanner, K. Mizuno, G. W. Smith, Assessment of Oval Defects by Means of Double-Crystal Synchrotron X-ray Reflection Topography, Proceedings of the 6th Annual Conference of the German Crystallographic Society, March 2 - 5, 1998, Karlsruhe, Germany.
  11. C. C. Phillips, H. R. Hardaway, J. Heber, P. Moeck, M. J. Pullin, P. J. Tang, P. Yuen, Recent Advances in In(As,Sb) SLS and QW LEDs for the 3- to 10-um Region, Proceedings of SPIE Volume 3279 154, DOI:10.1117/12.304425, January 28 - 29, 1998, San Jose, California.

1997

  1. K. Mizuno, P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehorse, G. W. Smith, A. M. Keir, Strain Relaxation of an InGaAs Epilayer on GaAs, Proceedings of the Sectional Meeting of the Physical Society of Japan, Vol. 52, Issue 2, Part 2, p. 107, October 5 - 8, 1997, Kobe University, Japan.
  2. P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, Critical Thickness of Quantum Well Structures: Limits of the Misfit Dislocation Removal Effect as Corroborated by Synchrotron X-ray Reflection Topography, Proceedings of the SR User Meeting, September 9 - 10, 1997, Daresbury, England, poster.
  3. P. Moeck, B. K. Tanner, G. W. Smith, Assessment of Oval Defects by Means of Double-Crystal Synchrotron X-ray Reflection Topography, Proceedings of the SR User Meeting, September 9 - 10, 1997, Daresbury, England, poster.
  4. B. K. Tanner, P. Moeck, K. Mizuno, Identification of Misfit Dislocations Using X-ray Scattering and Topography, Proceedings of the 7th International Conference on Defect Recognition and Image Processing in Semiconductors, i.e. Solid State Phenomena series, Volume 160, Chapter 104, pp. 177 - 186, September 7 – 10, 1997, Templin, Germany.
  5. B. K. Tanner, P. Moeck, K. Mizuno, G. Lacey, C. R. Whitehouse, G. W. Smith, A. D. Johnson, The Early Stages of Relaxation in Epitaxial InGaAs on GaAs, Proceedings of the X-TOP Symposium, Denver X-ray Conference, August 4 – 8, 1997, Denver, Colorado.
  6. P. Moeck, G. Lacey, B. K. Tanner, C. R. Whitehouse, G. W. Smith, Critical Thickness of Quantum Well Structures: Modified Matthews-Blakeslee Type Formula and Experimental Verification Employing Synchrotron X-ray Reflection Topography and Diffractometry, Proceedings of the Xth International Conference on Microscopy of Semiconducting Materials, April 7 - 10, 1997, Oxford, England, P1 - 31, poster.
  7. P. Moeck, B. K. Tanner, K. Mizuno, G. W. Smith, A. M. Keir, G. Lacey, C. R. Whitehouse, Relaxation of Capped (In,Ga)As on GaAs by Means of a Twin Formation Mechanism, Proceedings of the Xth International Conference on Microscopy of Semiconducting Materials, April 7 - 10, 1997, Oxford, England, P1 - 32, poster.

1996

  1. P. Moeck, B. K. Tanner, C. R. Whitehouse, A. G. Cullis, G. Lacey, G. F. Clark, B. Lunn, J. C. H. Hogg, A. M. Keir, A. D. Johnson, G. W. Smith, T. Martin, Relaxation of Low Misfit (In,Ga)As on GaAs from In-Situ Synchrotron Double-Crystal X-ray Topography and Diffractometry, Proceedings of the 23rd International Conference on the Physics of Semiconductors, July 21 - 26, 1996, Berlin, Germany, p. Th2C-3.

1995

  1. P. Moeck, B. K. Tanner, A. G. Cullis, S. J. Barnett, A. M. Keir, A. D. Johnson, T. Martin, J. Jefferson, G. W. Smith, M. Emeny, C. R. Whitehouse, G. Lacey, G. F. Clark, B. Lunn, J. C. H. Hogg, P. Ashu, W. E. Hagston, Relaxation of Low Misfit (In,Ga)As on GaAs from In-Situ Synchrotron High Resolution X-ray Diffraction, Proceedings Meeting Strained Layer Structures and Devices of the Semiconductor Physics Group of the Institute of Physics, September 7, 1995, London, UK, p. 8.
  2. C. R. Whitehouse, A. G. Cullis, G. F. Clark, G. Lacey, A. M. Keir, A. D. Johnson, B. Lunn, C. J. Hogg, G. W. Smith, T. Martin P. Moeck, J. H. Jefferson, P. Ashu, B. K. Tanner, W. E. Hagston, In-Situ Synchrotron X-ray Topography Studies of III-V Strained Layer Relaxation Processes, Proceedings Meeting Strained Layer Structures and Devices of the Semiconductor Physics Group of the Institute of Physics, September 7, 1995, London, UK, p. 7.
  3. C. R. Whitehouse, A. G. Cullis, S. J. Barnett, G. F. Clark, G. Lacey, A. M. Keir, A. D. Johnson, B. Lunn, C. J. Hogg, G. W. Smith, T. Martin, J. Jefferson, P. Ashu, B. K. Tanner, W. E. Hagston, P. Moeck, In Situ Synchrotron X-Ray Studies of (100) InGaAs/GaAs Strained-Layer Growth Processes, Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials, March 20 - 23, 1995, Oxford, UK.

1994

  1. P. Moeck, H. Berger, Determination of Lattice Distortions in Epitaxial Layer Systems, Proceedings of the 2nd European Symposium on X-Ray Topography and High Resolution Diffraction, September 5 - 7, 1994, Berlin, p. 153, poster.

1993

  1. P. Moeck, Estimation of Crystal Textures Using Electron Microscopy, Proceedings Dreiländertagung Elektronenmikroskopie, September 5 - 11, 1993, Zürich, Switzerland, p. 58, poster.
  2. P. Moeck, Description of the Real Orientation Relationships of Epitaxial Samples Using Transformation Matrices, Proceedings of the 8th International Conference on Microscopy of Semiconducting Materials, April, 3 - 8, 1993, Oxford, UK, poster.
  3. K. Bickmann, H. Berger, P. Moeck, J. Hauck, Temperaturabhängigkeit von Orientierungseffekten am Epitaxiesystem CdTe auf GaAs, Proceedings 2. Jahrestagung der Deutschen Gesellschaft für Kristallographie, March 10 - 12, 1993, Bochum, Germany.
  4. P. Moeck, Abhängigkeit der Liquidustemperatur von der chemischen Zusammensetzung bei HgaCdbTec-Schmelzlösungen, Proceedings 2. Jahrestagung der Deutschen Gesellschaft für Kristallographie, March 10 - 12, 1993, Bochum, Germany.

1992

  1. K. Bickmann, J. Hauck, H. Berger, P. Moeck, Temperaturabhängigkeit der Struktur einer epitaktischen CdTe (111) Schicht auf GaAs (001), Proceedings Röto'92, September 17 - 18, 1992, Jena, Germany.
  2. P. Moeck, W. Hoppe, ELCRYSAN - A Program for Direct Crystallographic Analyses, Proceedings of the X. European Congress on Electron Microscopy (EUREM 92), September 7 - 11, 1992, Granada, Spain, p. 193 – 194, poster.
  3. P. Moeck, H. Berger, Complete Characterization of Epitaxial Systems from the Lattice Geometrical Point of View, Proceedings of the 10th International Conference on Crystal Growth, August 16 - 21, 1992, San Diego, California, USA, poster.
  4. P. Moeck, Description of the Orientation Relationships of Epitaxial Systems by Transformation Matrices, Proceedings of the 14th European Crystallographic Meeting, August, 2 - 7, 1992, Enschede, Netherlands, poster.
  5. P. Moeck, W. Hoppe, Vereinfachung von kristallgeometrischen Analysen durch Beugungsgoniometrie und Benutzung des Matrizenkalküls, Proceedings 1. Jahrestagung der Deutschen Gesellschaft für Kristallographie, June 9 - 12, 1992, Mainz, Germany, poster.
  6. P. Moeck, H. Berger, Complete Characterization of Epitaxial CdTe on GaAs from the Lattice Geometrical Point of View, Proceedings of the European Materials Research Society Spring Meeting, International Conference on Electronic Materials (ICEM'92), June 2 - 5, 1992, Strasbourg, France, poster.

1991

  1. P. Moeck, H. Berger, Complete Characterization of Epitaxial Systems from the Lattice Geometrical Point of View, Proceedings of the 3rd International Symposium on Trends and New Applications in Thin Films, November 26 - 29, 1991, Strasbourg, France, p. 23.
  2. P. Moeck, W. Hoppe, Direct Crystallographic Analyses Using Electron Microscopy, Proceedings of the 3rd International Symposium on Trends and New Applications in Thin Films, November 26 - 29, 1991, Strasbourg, France, p. 110, poster.
  3. H. Berger, P. Moeck, B. Rosner, On the Description and Interpretation of Systematic Deviations from Simple Orientations in Epitaxal Systems, Proceedings Röto'91, Eds. K. Bickmann, J. Hauck, Forschungszentrum Jülich GmbH, September 19 - 20, 1991, Jülich, Germany, S. 6.
  4. P. Moeck, W. Hoppe, Direkte kristallographische Analysen mit Elektronenmikroskopen, Proceedings Röto'91, Eds. K. Bickmann, J. Hauck, Forschungszentrum Jülich GmbH, September 19 - 20, 1991, Jülich, Germany, S. 11.
  5. P. Moeck, W. Hoppe, Direkte kristallographische Analysen mit Elektronenmikroskopen, Proceedings 24. Kolloquium des Arbeitskreises für Elektronenmikroskopische Direkt - Abbildung und Analyse von Oberflächen (EDO) der Deutschen Gesellschaft für Elektronenmikroskopie, September 1 - 7, 1991, Darmstadt, Germany, S. 99, poster.
  6. P. Moeck, W. Hoppe, Direct Crystallographic Analyses Using Electron Microscopy, Proceedings of the 13th European Crystallographic Meeting, August 26 - 30, 1991, Triest, Italy, p. 53.
  7. P. Moeck, R. Hedel, H. Berger, Vollständige kristallgittergeometrische Charakterisierung von epitaktischem CdTe auf GaAs, Proceedings Gemeinsame Tagung der Arbeitsgemeinschaft Kristallographie und der Vereinigung für Kristallographie, March 10 - 13, 1991, Munich, Germany, S. 199, poster.
  8. P. Moeck, W. Hoppe, Direkte elektronenmikroskopische Methoden zur kristallographischen Analyse, Proceedings Gemeinsame Tagung der Arbeitsgemeinschaft Kristallographie und der Vereinigung für Kristallographie, March 10 - 13, 1991, Munich, Germany, S. 200, poster.
  9. A. Wermke, T. Goebel, T. Boeck, P. Moeck, K. Jacobs, Beiträge zur Abscheidung von Hg1-xCdxTe - LPE - Schichten mit reproduzierbarer Mischkristallzusammensetzung und hoher Oberflächenperfektion, Proceedings Jahrestagung der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung, March 6 - 8, 1991, Gießen, Germany, P41, poster.

1990

  1. P. Moeck, W. Hoppe, Direkte kristallographische Analysen mit SEM, Proceedings 23. Kolloquium des Arbeitskreises für Elektronenmikroskopische Direkt - Abbildung und Analyse von Oberflächen (EDO) der Deutschen Gesellschaft für Elektronenmikroskopie, September 10 - 14, 1990, Berlin, Germany, S. 275, poster.
  2. P. Moeck, Erstellung und Nutzung des stereographischen Projektion bei TEM - Untersuchungen, Proceedings 24. Jahrestagung der Vereinigung für Kristallographie, January 24 - 26, 1990, Neubrandenburg, Germany, S. 36, poster.
  3. P. Moeck, Koordinatentransformation zur Entwicklung von TEM - Methoden, Proceedings 24. Jahrestagung der Vereinigung für Kristallographie, January 24 - 26, 1990, Neubrandenburg, Germany, S. 37, poster.

1987

  1. D. Palm, J. Koehler, K. D. Schleinitz, P. Moeck, Präzisionsanalytik von (Hg1-zCdz)1-yTey für die Flüssigphasenepitaxie von Hg1-xCdxTe, Proceedings 5. Tagung Festkörperanalytik, June 30 - July 3, 1987, Karl-Marx-Stadt (Chemnitz), Germany, S. 83, poster.

1986

  1. P. Moeck, Eine einfache Methode zur Orientierungsbestimmung im TEM, Proceedings IV. Symposium Physikalische Grundlagen zu Bauelementetechnologien der Mikroelektronik, September 10 - 12, 1986, Frankfurt-on-Oder, Germany, S. 8.
  2. H. H. Richter, B. Tillack, R. Reinboth, P. Moeck, R. Banisch, G. Jatzkowski, M. Voelskow, J. Matthäi, E. Bott, Rekristallisation dicker Poly - Si - Schichten auf SiO2, Proceedings IV. Symposium Physikalische Grundlagen zu Bauelementetechnologien der Mikroelektronik, September 10 - 12, 1986, Frankfurt-on-Oder, S. 340.
  3. B. Tillack, R. Banisch, H. H. Richter, R. Reinboth, P. Moeck, Recrystallization of Thick Polycrystalline Silicon on Insulating Layer (SOI) Using CO2 - Laser Irradiation, Proceedings of the IVth School on Quantum Electronics Laser and Applications, September, 1986, Bourgas, Bulgaria, p. 725.

1985

  1. R. Reinboth, B. Tillack, G. Jatzkowski, H. H. Richter, R. Wuensch, P. Moeck, CW - CO2 Laser Recrystallization of Thick Polycrystalline Silicon Films on Insulating Layers, Proceedings of the 5th International Conference on Lasers and Their Applications (ILA 5), October 28 - November 1, 1985, Dresden, Germany, S. 195, poster.
  2. R. Wuensch, H. H. Richter, R. Reinboth, P. Moeck, CW - CO2 Laser Power Optimization in Recrystallization of Poly Si Films on Insulating Layers by Optical Reflectivity Measurement, Proceedings of the 5th International Conference on Lasers and Their Applications (ILA 5), October 28 - November 1, 1985, Dresden, Germany, S. 66, poster.
  3. R. Banisch, B. Tillack, B. Hunger, R. Reinboth, P. Moeck, High Resolution Four Points Probe Measurements on a SOI Structure Obtained by Laser Irradiation, Proceedings 9. Tagung Physik und Elektronik, October 22 - 25, 1985, Berlin, Germany, S. 123, poster.
  4. B. Tillack, R. Reinboth, R. Banisch, P. Moeck, W. Malze, Recrystallization of Thick Polycrystalline Si - Films on SiO2 Using Laser Beam Irradiation, Proceedings 9. Tagung Physik und Elektronik, October 22 - 25, 1985, Berlin, Germany, S. 118.
  5. P. Moeck, E. Bugiel, B. Tillack, R. Reinboth, TEM - Investigations of Laser Recrystallized Si on SiO2, Proceedings 19. Ceskoslovenska konference electronove mikroskopie, September 9 – 12, 1985, Olomouc, Czech Republic (CSSR), poster.
  6. P. Moeck, B. Tillack, R. Reinboth, Origin of Defects During Si-Crystal Growth on a SiO2 Layer, Proceedings of the 7th International Summer School Defects in Crystals, Proc. Ed.: E. Mizera, May 23 - 30, 1985, Szczyrk, Poland, p. 730, poster.

1984

  1. P. Moeck, E. Bugiel, Dendritic Growth Induced in Thin Silicon Films by CO2 - Laser Irradiation, Proceedings of the International Conference on Energy Pulse Modification of Semiconductors and Related Materials (EPM 84), September 25 - 28, 1984, Dresden, Germany, Proc. Ed.: K. Hennig, p. 411, poster.
  2. B. Tillack, R. Reinboth, P. Moeck, E. Bugiel, R. Winkler, Recrystallization of Thin Polycrystalline Si Films Using CO2 - Laser Irradiation, Proceedings of the International Conference on Energy Pulse Modification of Semiconductors and Related Materials (EPM 84), September 25 - 28, 1984, Dresden, Germany, p. 406.
  3. P. Moeck, E. Bugiel, TEM - Untersuchungen zum Wachstumsprozeß von Si - Schichten nach CO2-Laserbestrahlung, Proceedings III. Symposium Physikalische Grundlagen zu Bauelemente­technologien der Mikroelektronik, September 10 - 12, 1984, Frankfurt-on-Oder, Germany, S. 664, poster.
  4. R. Reinboth, B. Tillack, P. Moeck, R. Winkler, Rekristallisation von Poly - Si auf isolierenden Schichten mittels CO2 – Laser, Proceedings III. Symposium Physikalische Grundlagen zu Bauelemente­technologien der Mikroelektronik, September 10 - 12, 1984, Frankfurt-on-Oder, Germany, S. 356.