Patents

1984 - 2007

1. Peter Moeck, Database Supported Nanocrystal Structure Identification by Lattice-Fringe Fingerprinting with Structure Factor Extraction, US Patent Application No. 11/800, 422, Filing Date: May 3, 2007.
2. P. Moeck, N. D. Browning, Process for Forming Semiconductor Quantum Dots with Superior Structural Stability, Based on Earlier Provisional Patent Application Registration Number 29,381: P. Moeck, T. Topuria, N. D. Browning, Procedure to Produce Structurally Stable Semiconductor Quantum Dots with Internal Compositional Modulation and Varying Degree of Atomic Long-Range Order, Attorney's Docket No. 29,381, Attorney's Docket No. 83,324, Internal University of Illinois Reference: UICM-101.0 Prov (7882/83324), Filing Date: July 20, 2001.
3. P. Moeck, Verfahren zur Durchführung und Auswertung von elektronenmikroskopischen Unter­su­chungen, Patent DE 4037346 A1, DD 301839 A7, Filing Date: November 21, 1989.
4. T. Goebel, A. Wermke, K. Jacobs, P. Moeck, L. Parthier, T. Boeck, A. Thun, Verfahren zur vollständigen Entfernung der Schmelzlösung nach dem LPE - Prozess, Aktenzeichen C30B/321430 des Patentamtes Berlin, Filing Date: March 12, 1988.
5. T. Goebel, A. Wermke, K. Jacobs, P. Moeck, L. Parthier, T. Boeck, A. Thun, K. Schwenkenbecher, Züchtungsboot zur Flüssigphasenepitaxie, Aktenzeichen C30B/321431 des Patentamtes Berlin, Filing Date: March 12, 1988.
6. B. Tillack, R. Reinboth, P. Moeck, R. Banisch, H. H. Richter, R. Wuensch, G. Jatzkowski, Verfahren zur Herstellung einer Halbleiteranordnung, DD 241974, Filing Date: December 23, 1985.
7. P. Moeck, B. Tillack, R. Reinboth, Verfahren zur Erzeugung von einkristallinen Halbleiterschichten, DD 232935, Filing Date: December 27, 1984.

Publications

2006 - 2007

1. P. Moeck, P. Fraundorf, Structural Fingerprinting in the Transmission Electron Microscope: Overview and Opportunities to Implement Enhanced Strategies for Nanocrystal Identification, Zeitschrift für Kristallographie 222(11) (2007) 634 - 645.
2. S. K. Pradhan, Z. T. Deng, F. Tang, C. Wang, Y. Ren, P. Moeck, V. Petkov, Three-dimensional Structure of CdX (X=Se,Te) Nanocrystals by Total X-Ray Diffraction, Journal of Applied Physics 102(4) (2007) Art. No. 044304.
3. B. Seipel, R. Erni, A. Gupta, C. Li, F. J. Owens, K. V. Rao, N. D. Browning, P. Moeck, Structural and Ferromagnetic Properties of Cu-doped GaN, Journal of Materials Research 22(5) (2007) 1396 - 1405.
4. P. Moeck, O. Čertík, G. Upreti, B. Seipel, M. Harvey, W. Garrick, P. Fraundorf, Crystal Structure Visualizations in Three Dimensions with Support from the Open Access Nano-Crystallography Database, Journal of Materials Education 28(1) (2006) 87 - 95.

2001 - 2005

1. P. Fraundorf, W. T. Qin, P. Moeck, E. Mandell, Making Sense of Nanocrystal Lattice Fringes, Journal of Applied Physics 98(11) (2005) Art. No. 114308.
2. Y. Lei, P. Moeck, T. Topuria, N. D. Browning, R. Ragan, K. S. Min, H. A. Atwater, Void-Mediated Formation of Sn Quantum Dots in a Si Matrix, Applied Physics Letters 82(24) (2003) 4262 - 4264.
3. L. V. Titova, J. K. Furdyna, M. Dobrowolska, S. Lee, T. Topuria, P. Moeck P, N. D. Browning, Magnetic CdSe-based Quantum Dots Grown on Mn-passivated ZnSe, Applied Physics Letters 80(7) (2002) 1237 - 1239.
4. N. D. Browning, I. Arslan, Y. Ito, E. M. James, R. F. Klie, P. Moeck, T. Topuria, Y. Xin, Application of Atomic Scale STEM Techniques to the Study of Interfaces and Defects in Materials, Journal of Electron Microscopy 50(3) (2001) 205 - 218.
5. N. D. Browning, I. Arslan, E. M. James, P. Moeck, T. Topuria, Y. Xin, Analyzing Interfaces and Defects in Semiconducting Materials on the Atomic Scale, Microscopy of Semiconducting Materials, Institute of Physics Conference Series, No. 169 (2001) 1 - 12.
6. N. D. Browning, I. Arslan, P. Moeck, T. Topuria, Atomic Resolution Scanning Transmission Electron Microscopy, Physica Status Solidi B - Basic Research 227(1) (2001) 229-245.
7. P. Moeck, Analysis of Thermal Treatment Induced Dislocation Bundles in GaAs Wafers by Means of X-ray Transmission Topography and Complementary Methods, Journal of Applied Crystallography 34(1) (2001) 65 - 75.
8. P. Moeck, Slip in GaAs Substrates During Molecular Beam Epitaxial Growth: an X-ray Topographic Survey, Journal of Crystal Growth 224(1-2) (2001) 11 - 20.
9. P. Moeck, Z. J. Laczik, G. R. Booker, Thermal Processing Induced Plastic Deformation in GaAs Wafers, Materials Science and Engineering: B 80 (2001) 91 - 94.
10. P. Moeck, G. R. Booker, N. J. Mason, R. J. Nicholas, E. Alphandéry, T. Topuria, N. D. Browning, MOVPE Grown Self-Assembled and Self-Ordered InSb Quantum Dots in a GaSb Matrix Assessed by Means of AFM, CTEM, HRTEM and PL, Materials Science and Engineering: B 80 (2001) 112 - 115.
11. P. Moeck, T. Topuria, N. D. Browning, G. R. Booker, N. J. Mason, R. J. Nicholas, M. Dobrowolska, S. Lee, J. K. Furdyna, Internal Self-Ordering in In(Sb,As), (In,Ga)Sb and (Cd,Mn,Zn)Se Nano-Agglomerates / Quantum Dots, Applied Physics Letters 79 (2001) 946 - 948.
12. P. Moeck, T. Topuria, N. D. Browning, L. Titova, M. Dobrowolska, S. Lee and J. K. Furdyna, Self-Ordered CdSe Quantum Dots in ZnSe and (Zn,Mn)Se Matrices Assessed by Transmission Electron Microscopy and Photoluminescence Spectroscopy, Journal of Electronic Materials 30 (2001) 748 - 755.

1996 - 2000

1. M. Herms, M. Fukuzawa, V. G. Melov, J. Schreiber, P. Moeck, M. Yamada, Residual Strain in Annealed GaAs Single-Crystal Wafers as Determined by Scanning Infrared Polariscopy, X-ray Diffraction and Topography, Journal of Crystal Growth 210(1-3) (2000) 172 - 176.
2. P. Moeck, Comparison of Experiments and Theories for Plastic Deformation in Thermally Processed GaAs Wafers, Crystal Research and Technology 35 (2000) 529 – 540, and Errata in Crystal Research and Technololgy 35 (2000) 1131.
3. P. Moeck, Thermal Treatment Induced Dislocation Bundles in GaAs Substrates Studied by Scanning Infrared Polariscopy, Visible-Light Interferometry, Transmission Electron Microscopy, Makyoh and X-ray Topography, Microscopy and Microanalysis 6 (2000) 1102 – 1103 (Supplement 2: Proceedings).
4. P. Moeck, G. R. Booker, E. Alphandéry, N. J. Mason, R. J. Nicholas, Self-Organised Sb-Based Quantum Dot Structures Studied by Means of AFM, TEM and PL, Microscopy and Microanalysis Volume 6 Supplement 2 (2000) 1104 - 1105.
5. P. Moeck, G. R. Booker, N. J. Mason, E. Alphandéry, R. J. Nicholas, MOVPE Grown Self-Assembled Sb-Based Quantum Dots Assessed by Means of AFM and TEM, IEE Proceedings – Optoelectronics 147 (2000) 209 - 215.
6. P. Moeck, G. W. Smith, How to Avoid Plastic Deformation in GaAs Wafers During Molecular Beam Epitaxial Growth, Crystal Research and Technology 35(5) (2000) 541 - 548.
7. E. Alphandéry, R. J. Nicholas, N. J. Mason, P. Moeck, G. R. Booker, Self-Assembled InSb Quantum Dots on GaSb: A Photoluminescence, Magnetoluminescence and Atomic Force Microscopy Study, Applied Physics Letters 74 (1999) 2041 - 2043.
8. K. Mizuno, P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, A. M. Keir, Partial Strain Relaxation in (In,Ga)As Epilayers on GaAs by Means of Twin Formation, Journal of Crystal Growth 198(2) (1999) 1146 - 1150.
9. P. Moeck, G. R. Booker, E. Alphandéry, R. J. Nicholas, N. J. Mason, Self-Assembled InSb Quantum Dots in InAs and GaSb Matrices Assessed by Means of TEM, AFM and PL, Institute of Physics Conference Series No. 164 (1999) 133 - 136.
10. P. Moeck, M. Fukuzawa, Z. Laczik, M. Yamada, G. W. Smith, G. R. Booker, B. K. Tanner, M. Herms, Dislocation Bundles in GaAs Substrates: an X-ray Topography & Diffraction, Scanning Infrared Polariscopy, Electron Microscopy, Nomarski Microscopy, and Makyoh Topography Assessment, Institute of Physics Conference Series No. 164 (1999) 67 - 72.
11. P. Moeck, K. Mizuno, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, A. M. Keir, Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation, Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Review Papers 38(6A) (1999) 3628 - 3631.
12. M. J. Pullin, H. R. Hardaway, J. D. Heber, C. C. Phillips, W. T. Yuen, R. A. Stradling, P. Moeck, Room-Temperature InAsSb Strained-layer Superlattice Light-Emitting Diodes at Lambda = 4.2 mu m with AlSb Barriers for Improved Carrier Confinement, Applied Physics Letters 74(16) (1999) 2384 - 2386.
13. B. K. Tanner, A. M. Keir, P. Moeck, C. R. Whitehouse, G. Lacey, A. D. Johnson, G. W. Smith, G. F. Clark, X-ray Optics of in Situ Synchrotron Topography of InGaAs on GaAs, Journal of Physics D: Applied Physics 32 (1999) A119 - A122.
14. G. Horsburgh, K. A. Prior, W. Meredith, I. Galbraith, B. C. Cavenett, C. R. Whitehouse, G. Lacey, A. G. Cullis, P. J. Parbrook, P. Moeck, K. Mizuno, X-ray Topography Measurements of the Critical Thickness on ZnSe on GaAs, Applied Physics Letters 72 (1998) 3148 - 3150.
15. G. Lacey, C. R. Whitehouse, P. J. Parbrook, A. G. Cullis, A. M. Keir, P. Moeck, A. D. Johnson, G. W. Smith, G. F. Clark, B. K. Tanner, T. Martin, B. Lunn, J. C. H. Hogg, M. T. Emeny, B. Murphy, S. Bennett, In-Situ Direct Measurement of Activation Energies for the Generation of Misfit Dislocations in the InGaAs/GaAs (001) system, Applied Surface Science 123/124 (1998) 718 - 724.
16. P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, Critical Thickness of Single Strained (Ga,In)As Layers as Observed by in-Situ Synchrotron X-ray Topography, Zeitschrift für Kristallographie Supplement No. 15 (1998) 159.
17. P. Moeck, B. K. Tanner, G. Lacey, C. R. Whitehouse, G. W. Smith, Critical Thickness Observation Window of Quantum-Well Structures as Observed by Synchrotron X-ray Topography, Zeitschrift für Kristallographie Supplement No. 15 (1998) 159.
18. P. Moeck, B. K. Tanner, K. Mizuno, G. W. Smith, Assessment of Oval Defects by Means of Double-Crystal Synchrotron X-ray Reflection Topography, Zeitschrift für Kristallographie Supplement No. 15 (1998) 158.
19. C. B. O’Donnell, G. Lacey, G. Horsburgh, A. G. Cullis, C. R. Whitehouse, P. J. Parbrook, W. Meredith, I. Galbraith, P. Moeck, K. A. Prior, B. C. Cavenett, Measurement by X-ray Topography of the Critical Thickness of ZnSe Grown on GaAs, Journal of Crystal Growth 185 (1998) 95 - 99.
20. B. K. Tanner, P. Moeck, K. Mizuno, Identification of Misfit Dislocations Using X-ray Scattering and Topography, Institute of Physics Conference Series No. 160 (1998) 177 - 186.
21. P. Moeck, G. Lacey, G. W. Smith, B. K. Tanner, C. R. Whitehouse, Critical Thickness of Quantum Well Structures: Modified Matthews-Blakeslee Type Formula and Experimental Verification Employing Synchrotron X-ray Reflection Topography and Diffractometry, Institute of Physics Conference Series No. 157 (1997) 165 - 168.
22. C. R. Li, B. K. Tanner, P. Moeck, J. H. C. Hogg, B. Lunn, D. E. Ashenford, High Resolution X-ray Scattering from CdMnTe/CdTe Multiple Quantum Well Structures, Il Nuovo Cimento 19 D (1996) 447 - 454.
23. P. Moeck, B. K. Tanner, C. R. Li, A. M. Keir, A. D. Johnson, G. Lacey, G. F. Clark, B. Lunn, J. C. H. Hogg, Determination of the Critical Thickness of Misfit Disloca­tion Multiplication Using In-Situ Double Crystal X-ray Diffraction, Semiconductor Science and Technology 11 (1996) 1051 – 1055, Erratum 11 (1996) 1363.
24. P. Moeck, B. K. Tanner, C. R. Whitehouse, A. G. Cullis, G. Lacey, G. F. Clark, B. Lunn, J. C. H. Hogg, A. M. Keir, A. D. Johnson, G. W. Smith, T. Martin, Relaxation of Low Misfit (In,Ga)As on GaAs from In-Situ Synchrotron Double-Crystal X-ray Topography and Diffractometry, in: The Physics of Semiconductors, Volume III, Section B, pp. 927 - 930, eds. M. Scheffler and R. Zimmermann, World Scientific, Singapore 1996.

1991 - 1995

1. P. Moeck, Estimation of Crystal Textures Using Electron Microscopy, Beiträge Elektronenmikroskopische Direktabbildung und Analyse von Oberflächen 28 (1995) 31 - 36.
2. H. Berger, P. Moeck, B. Rosner, Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth, Acta Physica Polonia: A 84 (1993) 279 - 286.
3. K. Bickmann, H. Berger, P. Moeck, J. Hauck, Temperaturabhängigkeit von Orientierungseffekten am Epitaxiesystem CdTe auf GaAs, Zeitschrift für Kristallographie Supplement No. 7 (1993) 19.
4. K. Bickmann, J. Hauck, P. Moeck, H. Berger, Monoclinic Deformation and Tilting of Epitaxial CdTe-Films on GaAs at 25-400-Degrees-C, Journal of Crystal Growth 131(1-2) (1993) 133 - 137.
5. P. Moeck, Abhängigkeit der Liquidustemperatur von der chemischen Zuammensetzung bei HgaCdbTec-Schmelzlösungen, Zeitschrift für Kristallographie Supplement No. 7 (1993) 132.
6. P. Moeck, Complete Characterization of Epitaxial CdTe on GaAs from the Lattice Geometrical Point of View, Materials Science and Engineering: B 16 (1993) 165 - 167.
7. P. Moeck, Complete Characterization of Epitaxial Systems from the Lattice Geometrical Point-of-View. 1. Fundamentals, Journal of Crystal Growth 128(1-4) Part 1 (1993) 122 - 126.
8. P. Moeck, Description of the Real Orientation Relationships of Epitaxial Samples Using Transformation Matrices, Institute of Physics Conference Series No. 134 (1993) 593 - 596.
9. P. Moeck, Estimation of Crystal Textures Using Electron Microscopy, Optik 94 Supplement No. 4 (1993) 58.
10. P. Moeck, W. Hoppe, Vereinfachung von kristallgeometrischen Analysen durch Beugungsgoniometrie und Benutzung des Matrizenkalküls, Zeitschrift für Kristallographie Supplement (1992).
11. P. Rudolph, M. Muehlberg, M. Neubert, T. Boeck, P. Moeck, L. Parthier, K. Jacobs, E. Kropp, Origin and Evolution of Background Impurity of Materials Used in the Preparation of (Hg, Cd)Te LPE Layers on CdTe Substrates, Journal of Crystal Growth 118(1-2) (1992) 204 - 212.
12. P. Moeck, A Direct Method for Orientation Determination Using TEM Part 1: Description of the Method, Crystal Research and Technology 26(5) (1991) 653 - 658.
13. P. Moeck, A Direct Method for Orientation Determination Using TEM Part 2: Experimental Example, Crystal Research and Technology 26(5) (1991) 797 - 801.
14. P. Moeck, A Direct Method for the Determination of Orientation Relationships, Crystal Research and Technology 26 (1991) 957 - 962.
15. P. Moeck, In Situ Indexing of Two - Beam Electron Diffraction Vectors, Crystal Research and Technology 26 (1991) K157 – K 159.
16. P. Moeck, H. Berger, Complete Characterization of Epitaxial Systems from the Lattice Geometrical Point of View, Vide - Couches Minces - Supplement 259 (1991) 23 - 25.
17. P. Moeck, R. Hedel, H. Berger, Vollständige kristallgittergeometrische Charakterisierung von epitaktischem CdTe auf GaAs, Zeitschrift für Kristallographie Supplement No. 3 (1991) 199.
18. P. Moeck, W. Hoppe, Direct Crystallographic Analyses Using Electron Microscopy, Vide - Couches Minces - Supplement 259 (1991) 110 - 113.
19. P. Moeck, W. Hoppe, Direct Crystallographic Analyses Using Electron Microscopy, Optik 88 Supplement 4 (1991) 103.
20. P. Moeck, W. Hoppe, Direct Crystallographic Analyses Using Electron Microscopy, Zeitschrift für Kristallographie Supplement No. 4 (1991) 53.
21. P. Moeck, W. Hoppe, Direkte elektronenmikroskopische Methoden zur kristallographischen Analyse, Zeitschrift für Kristallographie Supplement No. 3 (1991) 200.
22. P. Moeck, W. Hoppe, Direkte kristallographische Analysen mit Elektronenmikroskopen, Beiträge Elektronenmikroskopische Direktabbildung und Analyse von Oberflächen 24 (1991) 99 - 104.

1986 - 1990

1. P. Moeck, W. Hoppe, Direkte kristallographische Analysen mit SEM, Beiträge Elektronenmikroskopische Direktabbildung und Analyse von Oberflächen 23 (1990) 275 - 278.
2. B. Tillack, P. Moeck, R. Banisch, R. Reinboth, H. H. Richter, M. Voelskow, J. Matthäi, E. Wieser, Thick Monocrystalline Silicon on Oxidized Silicon Wafers Produced by a Zone Melting Process Using a Scanning Halogen Lamp, Physica Status Solidi (a) 94 (1986) 871 - 877.